MMBT2484

PN2484 / MMBT2484

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PN2484 / MMBT2484

PN2484

MMBT2484
C

E C B

TO-92
E

SOT-23
Mark: 1U

NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter
Collector-Emitter Voltage

Value
60 60 5.0 100 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN2484 625 5.0 83.3 200

Max
MMBT2484 350 2.8 357

Units
mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2000 Fairchild Semiconductor International

PN2484/MMBT2484, Rev B