MMBT2907AK

MMBT2907AK PNP Epitaxial Silicon Transistor

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MMBT2907AK PNP Epitaxial Silicon Transistor

MMBT2907AK
PNP Epitaxial Silicon Transistor General Purpose Transistor

Marking

2 1

2FK

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Ta 25 C unless otherwise noted

Parameter

Value
-60 -60 -5 -600 350 -55 150

Units
V V V mA mW C

Collector Power Dissipation Operating Junction and Storage Temperature Range

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO ICBO hFE

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain

Test Condition
IC -10 A, IE 0 IC -10mA, IB 0 IE -10 A, IC 0 VCB -50V, IE 0 VCE -10V, IC -0.1mA VCE -10V, IC -1.0mA VCE -10V, IC -10mA VCE -10V, IC -150mA VCE -10V, IC -500mA IC -150mA, IB -15mA IC -500mA, IB -50mA IC -150mA, IB -15mA IC -500mA, IB -50mA IC -50mA, VCE -20V, f 100MHz VCB -10V, IE 0, f 1.0MHz VCC -30V, IC -150mA IB1 -15mA VCC -6V, IC -150mA IB1 IB2 -15mA

Min.
-60 -60 -5

Max.

Units
V V V A

-0.01 75 100 100 100 50

300 -0.4 -1.6 -1.3 -2.6 V V V V MHz 8 50 110 pF ns ns

VCE (sat) VBE (sat) fT Cob tON tOFF

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Turn Off Time

200

Pulse Test: Pulse Width300 s, Duty Cycle2%

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MMBT2907AK Rev. B