MMBT3646

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MMBT3646

MMBT3646
Switching Transistor
3

2 1

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO VCES VCBO VEBO IC PD TJ, TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Dissipation - Derate above 25 C - Continuous TA 25 C Value 15 40 40 5 300 625 5 150 mA mW mW/ C C Units V V V

Operating and Storage Junction Temperature Range

Electrical Characteristics TC 25 C unless otherwise noted
Symbol Off Characteristics V(BR)CES VCEO(SUS) V(BR)CBO V(BR)EBO ICES Parameter Min. 40 15 40 5 0.5 3 30 25 15 120 Typ. Max. Units V V V V A Collector-Emitter Breakdown Voltage (IC 100 Adc, VBE 0) Collector-Emitter Sustaining Voltage (1) (IC 10mAdc, IB 0) Collector-Base Breakdown Voltage (IC 100 Adc, IE 0) Emitter-Base Breakdown Voltage (IE 100 Adc, IC 0) Collector Cut-off Current (VCE 20Vdc, VBE 0) (VCE 20Vdc, VBE 0, TA 65 C) DC Current Gain (IC 30mAdc, VCE 0.4Vdc) (IC 100mAdc, VCE 0.5Vdc) (IC 300mAdc, VCE 1Vdc) Collector-Emitter Saturation Voltage (IC 30mAdc, IB 3mAdc) (IC 100mAdc, IB 10mAdc) (IC 300mAdc, IB 30mAdc) (IC 30mA, IB 3mA, TA 65 C) Base-Emitter Saturation Voltage (IC 30mAdc, IB 3mAdc) (IC 100mAdc, IB 10mAdc) (IC 300mAdc, IB 30mAdc) 0.73

On Characteristics (1) hFE

VCE(sat)

0.2 0.28 0.5 0.3 0.95 1.2 1.7

V

VBE(sat)

V

2002 Fairchild Semiconductor Corporation

Rev. A1, November 2002

MMBT3646 Datasheet Fairchild Download PDF

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MMBT3646 DATASHEET