MMBT3904K

MMBT3904K NPN Epitaxial Silicon Transistor

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MMBT3904K NPN Epitaxial Silicon Transistor

MMBT3904K
NPN Epitaxial Silicon Transistor General Purpose Transistor

Marking

2 1

1AK

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Ta 25 C unless otherwise noted

Parameter

Value
60 40 6 200 350 -55 150

Units
V V V mA mW C

Collector Power Dissipation Operating Junction and Storage Temperature Range

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO ICEX hFE

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain

Test Condition
IC 10 A, IE 0 IC 1mA, IB 0 IE 10 A, IC 0 VCE 30V, VEB 3V VCE 1V, IC 0.1mA VCE 1V, IC 1mA VCE 1V, IC 10mA VCE 1V, IC 50mA VCE 1V, IC 100mA IC 10mA, IB 1mA IC 50mA, IB 5mA IC 10mA, IB 1mA IC 50mA, IB 5mA VCB 5V, IE 0, f 1MHz VCE 20V, IC 10mA, f 100MHz IC 100 A, VCE 5V, RS 1K f 10Hz to 15.7KHz VCC 3V, VBE 0.5V IC 10mA, IB1 1mA VCC 3V, IC 10mA, IB1 IB2 1mA

Min.
60 40 6

Max.

Units
V V V

50 40 70 100 60 30

300

VCE(sat) VBE(sat) Cob fT NF tON tOFF

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Noise Figure Turn On Time Turn Off Time

0.2 0.3 0.65 0.85 0.95 4 300 5 70 250

V V V V pF MHz dB ns ns

Pulse Test: Pulse Width300 s, Duty Cycle2%

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MMBT3904K Rev. B