MMBT3906K

MMBT3906K PNP Epitaxial Silicon Transistor

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MMBT3906K PNP Epitaxial Silicon Transistor

MMBT3906K
PNP Epitaxial Silicon Transistor General Purpose Transistor

Marking

2 1

2AK

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Ta 25 C unless otherwise noted

Parameter

Value
-40 -40 -5 -200 350 -55 150

Units
V V V mA mW C

Collector Power Dissipation Operating Junction and Storage Temperature Range

Electrical Characteristics T 25 C unless otherwise noted
a

Symbol
BVCBO BVCEO BVEBO ICEX hFE

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain

Test Condition
IC -10 A, IE 0 IC -1.0mA, IB 0 IE 10 A, IC 0 VCE -30V, VEB -3V VCE -1V, IC -0.1mA VCE -1V, IC -1mA VCE -1V, IC -10mA VCE -1V, IC -50mA VCE -1V, IC -100mA IC -10mA, IB -1mA IC -50mA, IB -5.0mA IC -10mA, IB -1.0mA IC -50mA, IB -5.0mA IC -10mA, VCE -20V, f 100MHz VCB -5V, IE 0, f 1.0MHz IC -100 A, VCE -5V, RS 1K f 10Hz to 15.7KHz VCC -3V, VBE -0.5V IC -10mA, IB1 -1mA VCC -3V, IC -10mA, IB1 IB2 -1mA

Min.
-40 -40 -5

Max.

Units
V V V

-50 60 80 100 60 30

300

VCE (sat) VBE (sat) fT Cob NF tON tOFF

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time

-0.25 -0.4 -0.65 250 4.5 4 70 300 -0.85 -0.95

V V V V MHz pF dB ns ns

Pulse Test: Pulse Width300 s, Duty Cycle2%

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

MMBT3906K Rev. B