MMBT4400

2N4400 / MMBT4400

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2N4400 / MMBT4400

2N4400

MMBT4400
C

E C B

TO-92
E

SOT-23
Mark: 83

NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
40 60 6.0 600 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4400 625 5.0 83.3 200

Max
MMBT4400 350 2.8 357

Units
mW mW/ C C/W C/W

2001 Fairchild Semiconductor Corporation

2N4400/MMBT4400, Rev A