MMBT4401K NPN Epitaxial Silicon Transistor

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MMBT4401K NPN Epitaxial Silicon Transistor

November 2006

MMBT4401K
NPN Epitaxial Silicon Transistor Switching Transistor

tm

3

Marking

2 1

2XK

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Ta 25 C unless otherwise noted

Parameter

Value
60 40 6 600 350 -55 150

Units
V V V mA mW C

Operating Junction and Storage Temperature Range

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO IBEV ICEX hFE

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base Cut-off Current Collector Cut-off Current DC Current Gain

Test Condition
IC 100 A, IE 0 IC 1.0mA, IB 0 IE 100 A, IC 0 VCE 35V, VEB 0.4V VCE 35V, VEB 0.4V VCE 1V, IC 0.1mA VCE 1V, IC 1mA VCE 1V, IC 10mA VCE 1V, IC 150mA VCE 2V, IC 500mA IC 150mA, IB 15mA IC 500mA, IB 50mA IC 150mA, IB 15mA IC 500mA, IB 50mA IC 20mA, VCE 10V, f 100MHz VCB 5V, IE 0, f 100KHz VCC 30V, VBE 2V IC 150mA, IB1 15mA VCC 30V, IC 150mA IB1 IB2 15mA

Min.
60 40 6

Max.

Units
V V V

100 100 20 40 80 100 40

nA nA

300 0.4 0.75 V V V V MHz 6.5 35 255 pF ns ns

VCE (sat) VBE (sat) fT Cob tON tOFF

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Turn Off Time

0.75 250

0.95 1.2

Pulse Test: Pulse Width300 s, Duty Cycle2%

2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

MMBT4401K Rev. C

MMBT4401K Datasheet Fairchild Download PDF

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MMBT4401K DATASHEET