MMBT4403K

MMBT4403K PNP Epitaxial Silicon Transistor

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MMBT4403K PNP Epitaxial Silicon Transistor

November 2006

MMBT4403K
PNP Epitaxial Silicon Transistor Switching Transistor

Marking

2 1

2TK

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Ta 25 C unless otherwise noted

Parameter

Value
-40 -40 -5 -600 350 -55 150

Units
V V V mA mW C

Collector Power Dissipation Operating Junction and Storage Temperature Range

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO IBL ICEX hFE

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base Cut-off Current Collector Cut-off Current DC Current Gain

Test Condition
IC -0.1mA, IE 0 IC -1.0mA, IB 0 IE -0.1mA, IC 0 VCE -35V, VEB -0.4V VCE -35V, VEB -0.4V VCE -1V, IC -0.1mA VCE -1V, IC -1.0mA VCE -1V, IC -10mA VCE -2V, IC -150mA VCE -2V, IC -500mA IC -150mA, IB -15mA IC -500mA, IB -50mA IC -150mA, IB -15mA IC -500mA, IB -50mA IC -20mA, VCE -10V, f 100MHz VCB -10V, IE 0, f 140KHz VCC -30V, VBE -2V IC -150mA, IB1 -15mA VCC -30V, IC -150mA IB1 IB2 -15mA

Min.
-40 -40 -5

Max.

Units
V V V A A

-0.1 -0.1 30 60 100 100 20

300 -0.4 -0.75 V V V V MHz 8.5 35 255 pF ns ns

VCE (sat) VBE (sat) fT Cob tON tOFF

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Turn Off Time

-0.75 200

-0.95 -1.3

Pulse Test: Pulse Width300 s, Duty Cycle2%

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com