2N5210/MMBT5210

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2N5210/MMBT5210

2N5210/MMBT5210
NPN General Purpose Amplifier
C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50 mA. C BE

TO-92
B

E

SOT-23
Mark: 3M

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
50 50 4.5 100 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max.
2N5210 625 5.0 83.3 200 MMBT5210 350 2.8 357

Units
mW mW/ C C/W C/W

2002 Fairchild Semiconductor Corporation

2N5210, Rev B

MMBT5210 Datasheet Fairchild Download PDF

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MMBT5210 DATASHEET