MOC70P1

MOC70P1 / MOC70P2 / MOC70P3

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MOC70P1 / MOC70P2 / MOC70P3
PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH
PACKAGE DIMENSIONS
0.510 [12.95]

DESCRIPTION
The MOC70PX consists of an infrared light emitting diode coupled to an NPN silicon phototransistor packaged into an injection molded housing. The housing is designed for wide gap, non contact sensing.

0.250 [6.35]

0.506 [12.85] 0.200 [5.08] NOM 0.153 [3.89] 2X C L 0.080 [2.03] NOM

FEATURES
0.270 [6.86]

No contact sensing 5 mm gap

SCHEMATIC
1 4

0.050 [1.27] 0.140 [3.56] 0.105 [2.67] 0.380 [9.65] PIN 2 CATHODE PIN 3 (COLLECTOR) SEATING PLANE 0.020 [0.51] 4 X

.040" aperture Low profile PCB mount Transistor output

0.100 [2.54]

NOTES
PIN 1 (ANODE) PIN 4 (EMITTER)

NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified.

1. Derate power dissipation linearly, on each component, 1.67 mW/ C above 25 C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip 1/16" (1.6mm) from housing. 5. As long as leads are not under any stress or spring tension.

ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4,5) Soldering Temperature (Flow)(2,3,5) EMITTER Continuous Forward Current Reverse Voltage Power Dissipation SENSOR Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation(1)
(1)

(TA 25 C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD VCEO VECO IC PD Rating -55 to 100 -55 to 100 240 for 5 sec 260 for 10 sec 50 6 100 30 4.5 20 150 Units C C C C mA V mW V V mA mW

2001 Fairchild Semiconductor Corporation DS300009 4/25/01

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