DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOCD211-M

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DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOCD211-M
DESCRIPTION
The MOCD211-M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.

FEATURES
U.L. Recognized (File E90700, Volume 2) VDE Recognized (File 136616) (add option "V" for VDE approval, i.e, MOCD211V-M) Minimum BVCEO of 30 Volts Guaranteed Standard SOIC-8 Footprint, with 0.050" Lead Spacing Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering High Input-Output Isolation of 2500 VAC(rms) Guaranteed Compact Dual Channel Optocoupler

ANODE 1 1

8 COLLECTOR 1

CATHODE 1 2

7 EMITTER 1

APPLICATIONS
Interfacing and coupling systems of different potentials and impedances General purpose switching circuits Monitor and detection circuits

ANODE 2 3

6 COLLECTOR 2

CATHODE 2 4

5 EMITTER 2

ABSOLUTE MAXIMUM RATINGS (TA 25 C Unless otherwise specified)
Rating EMITTER Forward Current - Continuous Forward Current - Peak (PW 100 s, 120 pps) Reverse Voltage LED Power Dissipation TA 25 C Derate above 25 C DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Collector Current-Continuous Detector Power Dissipation TA 25 C Derate above 25 C TOTAL DEVICE Input-Output Isolation Voltage(1,2,3) (f 60 Hz, 1 min. Duration) Total Device Power Dissipation TA 25 C Derate above 25 C Ambient Operating Temperature Range Storage Temperature Range Symbol IF IF (pk) VR PD Value 60 1.0 6.0 90 0.8 30 7.0 150 150 1.76 Unit mA A V mW mW/ C V V mA mW mW/ C

VCEO VECO IC PD

VISO PD TA Tstg

2500 250 2.94 -40 to 100 -40 to 125

Vac(rms) mW mW/ C C C

2005 Fairchild Semiconductor Corporation

Page 1 of 8

6/15/05

MOCD211-M Datasheet Fairchild Download PDF

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MOCD211-M DATASHEET