ST5771-1

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ST5771-1

Discrete POWER Signal Technologies

ST5771-1

C

BE

TO-92

PNP Switching Transistor
This device is designed for high speed saturated switching applications at currents to 100mA. Sourced from Process 65. See PN4258 for characteristics.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
15 15 4.5 200 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max
ST5771-1 350 2.8 125 357

Units
mW mW/ C C/W C/W

1997 Fairchild Semiconductor Corporation

ST5771-1 Datasheet Fairchild Download PDF

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ST5771-1 DATASHEET