MHL9236| Datasheet

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Freescale Semiconductor Technical Data
Replaced by MHL9236N and MHL9236MN. There are no form, fit or function changes with these part replacements. N suffix added to part number to indicate transition to lead - free terminations.

MHL9236 Rev. 3, 1/2005

Cellular Band RF Linear LDMOS Amplifiers
Designed for ultra- linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA, CDMA or QPSK. Third Order Intercept: 47 dBm Typ Power Gain: 30.5 dB Typ (@ f = 880 MHz) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications For Use in TDMA, CDMA, QPSK or Analog Systems

MHL9236 MHL9236M

800 - 960 MHz 2.5 W, 30.5 dB RF LINEAR LDMOS AMPLIFIERS

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CASE 301AP - 02, STYLES 1, 2

Table 1. Absolute Maximum Ratings (TC = 25 C unless otherwise noted)
Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +10 - 40 to +100 - 20 to +100 Unit Vdc dBm C C

Table 2. Electrical Characteristics (VDD = 26 Vdc, TC = 25 C; 50 System)
Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR Output VSWR (f = 880 MHz) (f = 800 - 960 MHz) (f = 880 MHz) (f = 800 - 960 MHz) (f = 800 - 960 MHz) Symbol IDD Gp GF Pout 1 dB VSWRin VSWRout ITO NF Min -- 29.5 -- 33.0 -- -- 46.0 -- Typ 550 30.5 0.1 34.0 1.2:1 1.2:1 47.0 3.5 Max 620 31.5 0.3 -- 1.5:1 1.5:1 -- 4.5 dBm dB Unit mA dB dB dBm

Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) Noise Figure (f = 800 - 960 MHz)

MHL9236 MHL9236M 1

RF Device Data Freescale Semiconductor

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