MHPA18010N| Datasheet

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Freescale Semiconductor Technical Data

Document Number: MHPA18010N Rev. 4, 5/2006

CDMA Band RF Linear LDMOS Amplifier
Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA and GSM modulation systems. Typical CDMA Performance: 1840 MHz, 28 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Adjacent Channel Power: - 51 dBc @ 30 dBm Average Power, 885 kHz Channel Spacing Power Gain: 24.5 dB Min (@ f = 1840 MHz) Features Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications N Suffix Indicates Lead - Free Terminations

MHPA18010N

1805 - 1880 MHz 10 W, 24.5 dB RF HIGH POWER LDMOS AMPLIFIER

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CASE 301AP - 02, STYLE 3

Table 1. Maximum Ratings (TC = 25 C unless otherwise noted)
Rating DC Supply Voltage RF Input Power (Single Carrier CW) Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +20 - 40 to +100 - 20 to +100 Unit Vdc dBm C C

Table 2. Electrical Characteristics (VDD = 28 Vdc, VBIAS 8 V Set for Supply Current of 600 mA, TC = 25 C, 50 System)
Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR Noise Figure (f = 1840 MHz) (f = 1805 - 1880 MHz) (f = 1840 MHz) (f = 1805 - 1880 MHz) (f = 1840 MHz) Symbol IDD Gp GF P1dB VSWRin NF ACPR Min -- 24.5 -- -- -- -- -- Typ 600 25.5 0.2 41.5 1.5:1 8 - 58 Max -- -- 0.5 -- 2:1 10 - 51 dB dBc Unit mA dB dB dBm

Adjacent Channel Power Rejection @ 30 dBm Average Power, 1.23 MHz BW, 885 kHz Channel Spacing

MHPA18010N 1

RF Device Data Freescale Semiconductor

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