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MRF1047_D| Datasheet

By datasheet - July 8th, 2008

MRF1047_D| Datasheet

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Freescale Semiconductor, Inc. this document by MRF1047T1/D Order

NPN Silicon Low Noise Transistor
The MRF1047T1 is fabricated utilizing Motorola's latest 12 GHz f discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and IC = 3.0 mA. The noise performance of the MRF1047T1 at low bias makes this device the ideal choice in high gain, low noise applications. This device is well suited for low voltage, low current, front end applications, for use in pagers, cellular and cordless phones, and other portable wireless systems. The MRF1047T1 has 16 emitter fingers, with self aligned and enhanced processing, resulting in a high f, low operating current transistor with reduced parasitics. The MRF1047T1 is fully ion implanted with gold metallization and nitride passivation for maximum device r eliability, performance and uniformity.

RF NPN SILICON TRANSISTOR
f = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V
SEMICONDUCTOR TECHNICAL DATA

Freescale Semiconductor, Inc...

LIFETIME BUY

Low Noise Figure, NFmin = 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA High Current Gain Bandwidth Product, f = 12 GHz, 3.0 V @ 15 mA Maximum Stable Gain, 17 dB @ 1.0 GHz, 3.0 V and 10 mA Output Third Order Intercept, OIP3 = 26 dBm @ 1.0 GHz 3.0 V and 15 mA Fully Ion Implanted with Gold Metallization and Nitride Passivation

Pin 1. Base 2. Emitter 3. Collector
3

1

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous [Note 3] Power Dissipation @ TC = 75 C Derate Linearly above TC = 75 C at Storage Temperature Range Maximum Junction Temperature Symbol VCEO VCBO VEBO IC PD(max) Tstg TJ(max) Value 5.0 12 2.5 45 0.172 2.3 55 to 150 150 Unit Vdc Vdc Vdc mAdc W mW/ C C C

PLASTIC PACKAGE CASE 419 (SC 70, Tape & Reel Only)

ORDERING INFORMATION
Device MRF1047T1 Marking WB Package SC 70 Tape & Reel*

NOTES: 1. Meets Human Body Model (HBM) 300 V and Machine Model (MM) 75 V. 2. ESD data available upon request. 3. For MTBF >10 years.

*3,000 Units per 8 mm, 7 inch reel.

THERMAL CHARACTERISTIC
Characteristics Thermal Resistance, Junction to Case
NOTE:

Symbol RJC

Max 435

Unit C/W

To calculate the junction temperature use TJ = (PD x RJC) + TC. The case temperature measured on collector lead adjacent to the package body.

Motorola, Inc. 2001

Rev 3

MOTOROLA RF PRODUCTS DEVICE DATA Information On This Product, For More

1

Go to: www.freescale.com

LAST ORDER: 03AUG01

2

LAST SHIP: 26MAR02

MRF1047T1


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