MRF20030R_D| Datasheet

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF20030R/D

The RF Sub Micron Bipolar Line

RF Power Bipolar Transistor
Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common emitter class AB amplifier applications. Suitable for frequency modulated, amplitude modulated and multi carrier base station RF power amplifiers. Specified 26 Volts, 2.0 GHz, Class AB, Two Tones Characteristics Output Power -- 30 Watts (PEP) Power Gain -- 9.8 dB Efficiency -- 34% Intermodulation Distortion -- 28 dBc

MRF20030R
30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR

ARCHIVE INFORMATION

Excellent Thermal Stability Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP) Output Power Characterized with Series Equivalent Large Signal Impedance Parameters S Parameter Characterization at High Bias Levels Designed for FM, TDMA, CDMA, and Multi Carrier Applications Note: Not suitable for class A operation. MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Collector Emitter Voltage (RBE = 100 ) Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TC = 25 C Derate above 25 C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VCBO VCER VEB IC PD Tstg TJ

CASE 395C 01, STYLE 1

Value 25 60 60 30 3 4 125 0.71 65 to +150 200

Unit Vdc Vdc Vdc Vdc Vdc Adc Watts W/ C C C

THERMAL CHARACTERISTICS
Rating Thermal Resistance, Junction to Case
(1)

Symbol RJC

Max 1.4

Unit C/W

(1) Thermal resistance is determined under specified RF operating condition.

ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) Collector Base Breakdown Voltage (IC = 25 mAdc, IE = 0)
REV 1

V(BR)CEO V(BR)CES V(BR)CBO

25 60 60

28 70 70

-- -- --

Vdc Vdc Vdc

(Replaces MRF20030/D)

MOTOROLA RF Motorola, Inc. 1999 DEVICE DATA

MRF20030R 1

ARCHIVE INFORMATION

Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics Output Power -- 30 Watts Power Gain -- 11 dB Efficiency -- 40% Intermodulation Distortion -- 30 dBc