MRF281| Datasheet

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Freescale Semiconductor Technical Data

Document Number: MRF281 Rev. 5, 5/2006

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs
Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications. Specified Two - Tone Performance @ 1930 and 2000 MHz, 26 Volts Output Power -- 4 Watts PEP Power Gain -- 11 dB Efficiency -- 30% Intermodulation Distortion -- - 29 dBc Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power Features Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters S - Parameter Characterization at High Bias Levels RoHS Compliant Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.

MRF281SR1 MRF281ZR1
2000 MHz, 4 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs

CASE 458B - 03, STYLE 1 NI - 200S MRF281SR1

CASE 458C - 03, STYLE 1 NI - 200Z MRF281ZR1

Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25 C Derate above 25 C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 20 20 0.115 - 65 to +150 150 200 Unit Vdc Vdc W W/ C C C C

Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 5.74 Unit C/W

Table 3. Electrical Characteristics (TC = 25 C unless otherwise noted)
Characteristic Off Characteristics Drain - Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- 74 -- -- -- 10 1 Vdc Adc Adc Symbol Min Typ Max Unit

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

MRF281SR1 MRF281ZR1 1

RF Device Data Freescale Semiconductor