MRF5S19060M| Datasheet

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Freescale Semiconductor Technical Data
Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

Document Number: MRF5S19060M Rev. 5, 5/2006

RF Power Field Effect Transistors

MRF5S19060MR1 MRF5S19060MBR1
1990 MHz, 12 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs

N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment. Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 12 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 14 dB Drain Efficiency -- 23% IM3 @ 2.5 MHz Offset -- - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc in 30 kHz Channel Bandwidth Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg. Output Power Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection 200 C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

ARCHIVE INFORMATION

CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S19060MR1

CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S19060MBR1

Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25 C Derate above 25 C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, +15 218.8 1.25 - 65 to +175 200 Unit Vdc Vdc W W/ C C C

Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 75 C, 12 W CW Symbol RJC Value (1) 0.80 Unit C/W

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

MRF5S19060MR1 MRF5S19060MBR1 1

RF Device Data Freescale Semiconductor

ARCHIVE INFORMATION