MRF6S27085H| Datasheet
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Freescale Semiconductor Technical Data
Document Number: MRF6S27085H Rev. 2, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications. Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 20 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 23.5% ACPR @ 885 kHz Offset -- - 48 dBc in 30 kHz Bandwidth Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 85 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Lower Thermal Resistance Package Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications Low Gold Plating Thickness on Leads, 40 Nominal. RoHS Comp
liant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S27085HR3 MRF6S27085HSR3
2600- 2700 MHz, 20 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF6S27085HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF6S27085HSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25 C Derate above 25 C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +68 - 0.5, +12 350 2 - 65 to +150 150 200 Unit Vdc Vdc W W/ C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80 C, 85 W CW Case Temperature 76 C, 20 W CW Symbol RJC Value (1,2) 0.50 0.56 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S27085HR3 MRF6S27085HSR3 1
RF Device Data Freescale Semiconductor
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