MRF6VP21KH| Datasheet

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Freescale Semiconductor Technical Data

Document Number: MRF6VP21KH Rev. 1, 4/2008

RF Power Field Effect Transistor

N - Channel Enhancement - Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications. Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 sec, Duty Cycle = 20% Power Gain -- 24 dB Drain Efficiency -- 67.5% Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak Power Features Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Excellent Thermal Stability Designed for Push - Pull Operation Greater Negative Gate - Source Voltage Range for Improved Class C Operation RoHS Compliant In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

MRF6VP21KHR6

10 - 235 MHz, 1000 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET

CASE 375D - 05, STYLE 1 NI - 1230 PART IS PUSH - PULL

RFinA/VGSA 3

1 RFoutA/VDSA

RFinB/VGSB 4

2 RFoutB/VDSB

(Top View)

Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +110 - 6, +10 - 65 to +150 150 200 Unit Vdc Vdc C C C

Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80 C, 1000 W Pulsed, 100 sec Pulse Width, 20% Duty Cycle Symbol RJC Value (1,2) 0.03 Unit C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.

MRF6VP21KHR6 1

RF Device Data Freescale Semiconductor