MRF7S19080H| Datasheet

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Freescale Semiconductor Technical Data

Document Number: MRF7S19080H Rev. 0, 1/2007

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD - SCDMA and PCN - PCS/cellular radio applications. Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 24 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 18 dB Drain Efficiency -- 32% Device Output Signal PAR -- 6.2 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 38 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 80 Watts CW Peak Tuned Output Power Pout @ 1 dB Compression Point w 80 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate
- Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF7S19080HR3 MRF7S19080HSR3
1930 - 1990 MHz, 24 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs

CASE 465- 06, STYLE 1 NI - 780 MRF7S19080HR3

CASE 465A - 06, STYLE 1 NI - 780S MRF7S19080HSR3

Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)

Symbol VDSS VGS VDD Tstg TC TJ

Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225

Unit Vdc Vdc Vdc C C C

Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 81 C, 79 W CW Case Temperature 79 C, 24 W CW Symbol RJC Value (2,3) 0.60 0.69 Unit C/W

1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.

MRF7S19080HR3 MRF7S19080HSR3 1

RF Device Data Freescale Semiconductor