MRF858S_D| Datasheet

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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The RF Line

NPN Silicon RF Power Transistor
Designed for 24 Volt UHF large signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 960 MHz. Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.6 Watts CW Minimum Power Gain = 11 dB Minimum ITO = +44.5 dBm Typical Noise Figure = 6 dB

MRF858S
CLASS A 800 960 MHz 3.6 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR

ARCHIVE INFORMATION

Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.5 Adc and Rated Output Power Will Withstand RF Input Overdrive of 0.85 W CW Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

CASE 319A 02, STYLE 2

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Total Device Dissipation @ TC = 50 C Derate above 50 C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD TJ Tstg Value 30 55 4 20 0.138 200 65 to +150 Unit Vdc Vdc Vdc Watts W/ C C C

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance (TJ = 150 C, TC = 50 C) Symbol RJC Symbol Min Typ Max 6.9 Unit C/W

ELECTRICAL CHARACTERISTICS
Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (IC = 20 mA, IB = 0) Collector Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) Collector Base Breakdown Voltage (IC = 20 mA, IE = 0) Emitter Base Breakdown Voltage (IE = 1 mA, IC = 0) Collector Cutoff Current (VCB = 24 V, IE = 0) Teflon is a registered trademark of du Pont de Nemours & Co., Inc. V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 28 55 55 4 -- 35 85 85 5 -- -- -- -- -- 1 Vdc Vdc Vdc Vdc mA Max Unit

REV 3

MOTOROLA RF Motorola, Inc. 1998 DEVICE DATA

MRF858S 1

ARCHIVE INFORMATION

Characterized with Small Signal S Parameters and Series Equivalent Large Signal Parameters from 800 960 MHz