MW4IC001MR4| Datasheet

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Freescale Semiconductor Technical Data
Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

MW4IC001MR4 Rev. 4, 5/2006

RF LDMOS Wideband Integrated Power Amplifier
The MW4IC001M wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip design makes it usable from 800 MHz to 2170 MHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W - CDMA. Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA Output Power -- 900 mW PEP Power Gain -- 13 dB Efficiency -- 38% High Gain, High Efficiency and High Linearity Designed for Maximum Gain and Insertion Phase Flatness Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.

MW4IC001MR4
800 - 2170 MHz, 900 mW, 28 V W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER

ARCHIVE INFORMATION

CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC

Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25 C Derate above 25 C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, +15 4.58 0.037 - 65 to +150 150 Unit Vdc Vdc W W/ C C C

Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case @ 85 C Symbol RJC Value 27.3 Unit C/W

Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 0 (Minimum) M1 (Minimum) C2 (Minimum)

Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C

RF Device Data Freescale Semiconductor

ARCHIVE INFORMATION