Datasheet HVVI Semiconductors

HVVi Semiconductors is an American manufacturer of high performance silicon RF power transistors for wireless applications. The company was founded in 2004, by Bob Davies, the inventor of the LDMOS transistor. Mr. Davies set out to overcome the limitations inherent in his LDMOS invention, and the patent pending high voltage vertical field effect transistor, HVVFET, is the result of his research. The HVVFET's low on-resistance improves power handling, and its low drain-to-source capacitance improves efficiency. Especially notable is the HVVFET’s superior ruggedness characteristic (VSWR) over LDMOS and bipolar transistors that eliminates isolators reducing system cost and weight. The HVVFET is useful in a wide variety of military, aerospace and commercial applications.

HVV0405 Transistor Family for UHF Radar

HVV0912 Transistor Family for L-Band Radar

HVV1011-035 PRODUCT OVERVIEW

HVV1011-300 High Voltage, High Ruggedness

HVV1012-060 PRODUCT OVERVIEW

HVV1012-100 PRODUCT OVERVIEW

HVV1012-250 High Voltage, High Ruggedness

HVV1214-025 PRODUCT OVERVIEW

HVV1214-075 PRODUCT OVERVIEW

HVV1214-100 High Voltage, High Ruggedness