10A015| Datasheet

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10A015
1.5 Watts, 20 Volts, Class A Linear to 1000 MHz

GENERAL DESCRIPTION
The 10A015 is a COMMON EMITTER transistor capable of providing 1.5 Watts of Class A, RF Output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness.

CASE OUTLINE 55FT, STYLE 2

ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 6 Watts 50 Volts 3.5 Volts 750 mA - 65 to + 150 oC + 200 oC

ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg Ft VSWR CHARACTERISTICS Power Out Power Input Power Gain Transition Frequency Load Mismatch Tolerance TEST CONDITIONS F = 1 GHz Ic = 220 mA Vcc = 20 Volts Vce = 20V, Ic =220 mA MIN 1.5 0.19 9.0 2.7 9.5 30:1 TYP MAX UNITS Watts Watts dB GHz

BVebo BVces BVceo hFE Cob jc

Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown DC Current Gain Output Capacitance Thermal Resistance

Ie = 1 mA Ic = 10 mA Ic = 10 mA Vce = 5 V, Ic =100 mA Vcb = 5 V, f = 1 MHz

3.5 50 24 20 3.8 20 29

Volts Volts Volts pF C/W

Issue February 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

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