10AM20| Datasheet

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10AM20
20 Watts, 20 Volts, Class A Linear to 1000 MHz

GENERAL DESCRIPTION
The 10AM20 is a COMMON EMITTER transistor capable of providing 20 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package.

CASE OUTLINE 55AT, STYLE 2

ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 63 Watts 50 Volts 3.5 Volts 5.5 Amps - 65 to + 200 oC + 200 oC

SEE NOTE BELOW

ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg Ft VSWR CHARACTERISTICS Power Out Power Input Power Gain Transition Frequency Load Mismatch Tolerance TEST CONDITIONS F = 1.0 GHz Ic = 2.8 A Vcc = 20 Volts Vce = 22 V, Ic = 2.8 A MIN 20 6.5 TYP 24 3.0 7.0 MAX 4.5 UNITS Watts Watts dB GHz

3:1

BVebo BVces BVceo HFE Cob jc

Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown DC Current Gain Output Capacitance Thermal Resistance

Ie = 15 mA Ic = 180 mA Ic = 180 mA Vce = 5 V, Ic = 1.0 A Vcb = 28V, f =1.0 MHz

3.5 50 24 20

Volts Volts Volts 40 1.2 1.5
o

pF C/W

Case Outline Note: During 1995 Ghz will be converting the 55AT style flange to the version using a slot in the mounting area, refer to 55AW.

Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120