20GF120KR| Datasheet
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APT20GF120KR
APT20GF120KR
1200V 32A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.
TO-220
Low Forward Voltage Drop Low Tail Current Avalanche Rated
MAXIMUM RATINGS
Symbol VCES VCGR VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage
High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated
G C E
C G E
All Ratings: TC = 25 C unless otherwise specified.
APT20GF120KR UNIT
1200 1200 20 32 20 64 40 22 200 -55 to 150 300
C mJ Watts Amps Volts
Collector-Gate Voltage (RGE = 20K) Gate-Emitter Voltage Continuous Collector Current @ TC = 25 C Continuous Collector Current @ TC = 90 C Pulsed Collector Current
1
@ TC = 25 C
RBSOA Clamped Inductive Load Current @ Rg = 11 TC = 125 C Single Pulse Avalanche Energy Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
2
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA) Gate Threshold Voltage (VCE = VGE, I C = 350uA, Tj = 25 C) MIN TYP MAX UNIT
1200 4.5 5.5 2.7 3.3 6.5 3.2 3.9 0.8 5.0
052-6205 Rev D 6-2002
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25 C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125 C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25 C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125 C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V)
I CES I GES
mA nA
100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
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