23A005| Datasheet

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23A005
0.5 Watts, 20 Volts, Class A Linear to 2300 MHz

GENERAL DESCRIPTION
The 23A005 is a COMMON EMITTER transistor capable of providing 0.5 Watt of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package.

CASE OUTLINE 55BT, STYLE 2

ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 3.0 Watts 50 Volts 3.5 Volts 400 mA - 65 to + 200 oC + 200 oC

ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg Ft VSWR CHARACTERISTICS Power Out Power Input Power Gain Transition Frequency Load Mismatch Tolerance TEST CONDITIONS F = 2.3 GHz Ic = 120 mA Vcc = 20 Volts Vce = 20V, Ic =120 mA MIN .5 8.5 4.0 TYP 0.7 .07 9.5 4.3 30:1 MAX UNITS Watts Watts dB GHz

BVebo BVces BVceo hFE Cob jc

Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown DC Current Gain Capacitance Thermal Resistance

Ie = 1 mA Ic = 10 mA Ic = 10 mA Vce = 5 V, Ic = 100 mA Vcb = 28V, f = 1 MHz

3.5 50 22 20 2.4 32 3.0 35

Volts Volts Volts pF C/W

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

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