2n7370| Datasheet

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TECHNICAL DATA
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/624 Devices 2N7370 Qualified Level JAN JANTX JANTXV

MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Junction Temperature Range

Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RJC
0

Value
100 100 5.0 0.2 12 100 -65 to +175 Max. 1.5

Units
Vdc Vdc Vdc Adc Adc W
0

THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Unit 0 C/W

TO-254*

1) Derate linearly 0.667 W/ C above TC > +25 C
*See Appendix A for package outline

ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 50 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc VCEO(sus) ICEO ICEX IEBO 100 1.0 0.5 2.0 Vdc mAdc mAdc mAdc

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