APT100GT60JRDL_B| Datasheet

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APT100GT60JRDL
600V, 100A, VCE(ON) = 2.1V Typical

Resonant Mode Combi IGBT
The Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed.

7 -22 T SO
"UL Recognized"
file # E145592

Features
Low Forward Voltage Drop Low Tail Current Integrated Gate Resistor Low EMI, High Reliability Ultra soft recovery diode RBSOA and SCSOA Rated High Frequency Switching to 50KHz Ultra Low Leakage Current

Typical Applications
ISOTOP

ZVS Phase Shifted Bridge Resonant Mode Switching Phase Shifted Bridge Welding Induction heating High Frequency SMPS
G E C

Low forward Diode Voltage (VF) RoHS Compliant

Maximum Ratings Symbol Parameter
VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25 C Continuous Collector Current @ TC = 100 C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150 C Total Power Dissipation Operating and Storage Junction Temperature Range

All Ratings: TC = 25 C unless otherwise specified. Ratings
600 Volts 30 148 80 300 300A @ 600V 500 -55 to 150 Watts C Amps

Unit

Static Electrical Characteristics Symbol Characteristic / Test Conditions
V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) Gate Threshold Voltage (VCE = VGE, IC = 2.0mA, Tj = 25 C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25 C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125 C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25 C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125 C) 2 Gate-Emitter Leakage Current (VGE = 30V)

Min
600 3 1.7 -

Typ
4 2.1 2.5 -

Max
5

Unit

Volts 2.5 75 A 300 nA
052-6358 Rev B 11 - 2008

ICES IGES

1500

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

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