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APT80GA90B_A| Datasheet

By datasheet - February 15th, 2009

APT80GA90B_A| Datasheet

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APT80GA90B
900V High Speed PT IGBT
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.

TO -2 47

APT80GA90B

G

C

E

Single die IGBT

FEATURES
Fast switching with low EMI Very Low Eoff for maximum efficiency Ultra low Cres for improved noise immunity Low conduction loss Low gate charge Increased intrinsic gate resistance for low EMI RoHS compliant

TYPICAL APPLICATIONS
ZVS phase shifted and other full bridge Half bridge High power PFC boost Welding UPS, solar, and other inverters High frequency, high efficiency industrial

Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL

Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25 C Continuous Collector Current @ TC = 100 C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25 C Switching Safe Operating Area @ TJ = 150 C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
1

Ratings
900 145 80 239 30 625 239A @ 900V -55 to 150 300

Unit
V

A

V W

C

Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES

TJ = 25 C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 47A VCE = 900V, VGE = 0V TJ = 25 C TJ = 125 C 3 TJ = 25 C TJ = 125 C

Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current

Min
900

Typ
2.5 2.2 4.5

Max
3.1 6 250 1000 100

Unit

V

VGE =VCE , IC = 1mA

A nA
052-6324 Rev A 4 - 2008

VGS = 30V

Thermal and Mechanical Characteristics
Symbol
RJC WT Torque

Characteristic
Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw

Min
-

Typ
5.9

Max
0.2 -

Unit
C/W g in lbf

10

Microsemi Website - http://www.microsemi.com


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