APTC60HM70T1G-Rev0| Datasheet

APTC60HM70T1G-Rev0| Datasheet

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APTC60HM70T1G
Full - Bridge Super Junction MOSFET Power Module
3 Q1 5 Q2 7 4 Q3 2 Q4 9

VDSS = 600V RDSon = 70m max @ Tj = 25 C ID = 39A @ Tc = 25 C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration

6

1

8 11 NTC

10

12

Pins 3/4 must be shorted together

Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant

Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25 C Tc = 80 C Max ratings 600 39 29 160 20 70 250 20 1 1800 Unit V A V m W A mJ
August, 2007 1 6 APTC60HM70T1G Rev 0

Tc = 25 C

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com

www.microsemi.com


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