APTGT75DDA60T3G-Rev1| Datasheet

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

APTGT75DDA60T3G
Dual Boost chopper Trench + Field Stop IGBT Power Module
13 14

VCES = 600V IC = 75A @ Tc = 80 C
Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction

CR1

CR2

23 Q1 26 27

8 Q2 4 3

29 15

31 R1

32 16

Features Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile Each leg can be easily paralleled to achieve a single boost of twice the current capability. RoHS Compliant

28 27 26 25 29 30

23 22

20 19 18 16 15

31 32 2 3 4 7 8 10 11 12

14 13

All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...

Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA

Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25 C TC = 80 C TC = 25 C TC = 25 C TJ = 150 C

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com

www.microsemi.com

1-6

APTGT75DDA60T3G Rev 1,

Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area

Max ratings 600 100 75 140 20 250 150A @ 550V

Unit V A V W
June, 2006