APTM100DA40T1G-Rev0| Datasheet

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APTM100DA40T1G
Boost chopper MOSFET Power Module
5 6 11

VDSS = 1000V RDSon = 400m typ @ Tj = 25 C ID = 20A @ Tc = 25 C
Application

CR1 3 4

NTC

AC and DC motor control Switched Mode Power Supplies Power Factor Correction

Features Power MOS 8TM MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Very low stray inductance Internal thermistor for temperature monitoring High level of integration

Q2 9 10 1 2

Benefits

Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant

Pins 1/2 ; 3/4 ; 5/6 must be shorted together

Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25 C Tc = 80 C Max ratings 1000 20 15 120 30 480 357 16 Unit V A V m W A
December, 2007 1 5 APTM100DA40T1G Rev 0

Tc = 25 C

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com

www.microsemi.com