APTM100H35FTG-Rev1| Datasheet

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APTM100H35FTG
Full - Bridge MOSFET Power Module
VBUS Q1 Q3

VDSS = 1000V RDSon = 350m typ @ Tj = 25 C ID = 22A @ Tc = 25 C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control

G1 S1 Q2 O UT1 O UT2 Q4

G3 S3

G2 S2 NT C1 0/VBUS NT C2

G4 S4

Features Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Max ratings 1000 22 17 88 30 420 390 25 50 3000 Unit V A V m W A mJ

G3 S3

G4 S4

OUT2

VBUS

0/VBUS

OUT1

S1 G1

S2 G2

NTC2 NTC1

Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS

Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25 C Tc = 80 C

Tc = 25 C

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com

www.microsemi.com

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APTM100H35FTG Rev 1

July, 2006