APTM120DU29TG-Rev1| Datasheet

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APTM120DU29TG
Dual Common Source MOSFET Power Module
D1 Q1 D2 Q2

VDSS = 1200V RDSon = 290m typ @ Tj = 25 C ID = 34A @ Tc = 25 C
Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies

S1 S NTC1

NTC2

Features Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Max ratings 1200 34 25 136 30 348 780 22 50 3000 Unit V A V m W A mJ

G2 S2

S1 G1

S2 G2

NTC2 NTC1

Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS

Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25 C Tc = 80 C

Tc = 25 C

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com

www.microsemi.com

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APTM120DU29TG Rev1

July, 2006