APTM20DAM10TG-Rev3| Datasheet

APTM20DAM10TG-Rev3| Datasheet

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APTM20DAM10TG
Boost chopper MOSFET Power Module
VBUS VBUS SENSE NTC2

VDSS = 200V RDSon = 10m typ @ Tj = 25 C ID = 175A @ Tc = 25 C
Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant

CR1

OUT Q2

G2

S2 0/VBUS NTC1

G2 S2

OUT

VBUS

0/VBUS

OUT

VBUS SENSE

S2 G2

NTC2 NTC1

Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS

Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25 C Tc = 80 C

Tc = 25 C

mJ

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com

www.microsemi.com

1 6

APTM20DAM10T G Rev 3

Max ratings 200 175 131 700 30 12 694 89 50 2500

Unit V A V m W A

July, 2006


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