APTM50HM38FG-Rev2| Datasheet

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

APTM50HM38FG
Full - Bridge MOSFET Power Module
VB US Q1 Q3

VDSS = 500V RDSon = 38m typ @ Tj = 25 C ID = 90A @ Tc = 25 C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control

G1 OUT1 OUT2

S1 Q2

S3 Q4

Features Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration

S2 0/VBUS

OUT1 G1 S1 VBUS 0/VBUS G2 S2

Benefits

S3 G3 OUT2

S4 G4

Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Max ratings 500 90 67 360 30 45 694 46 50 2500 Unit V A V m W A mJ

Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS

Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25 C Tc = 80 C

Tc = 25 C

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com

www.microsemi.com

1 6

APTM50HM38FG Rev 2

July, 2006