LDS-0016| Datasheet

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com

NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/349

DEVICES

LEVELS

2N3506 2N3506A 2N3506L 2N3506AL

2N3507 2N3507A 2N3507L 2N3507AL

JAN JANTX JANTXV

ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25 C @ TC = 25 C (2)
(1)

Symbol VCEO VCBO VEBO IC PT Top, Tstg

2N3506 40 60 5.0 3.0 1.0 5.0

2N3507 50 80

Unit Vdc Vdc Vdc Adc W C TO-5 (L-Versions)

Operating & Storage Temperature Range Note: 1) 2) Derate linearly 5.71 mW/ C for TA > +25 C Derate linearly 55.5 mW/ C for TC > +25 C

-65 to +200

ELECTRICAL CHARACTERISTICS (TA = +25 C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Emitter Cutoff Current VCE = 40Vdc VCE = 60Vdc Collector-Base Breakdown Voltage IC = 100uAdc Emitter-Base Breakdown Voltage IE = 10uAdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 500mAdc, VCE = 1Vdc Forward-Current Transfer Ratio IC = 1.5Adc, VCE = 2Vdc Forward-Current Transfer Ratio IC = 2.5Adc, VCE = 3Vdc T4-LDS-0016 Rev. 1 (072040) 2N3506 2N3507 2N3506 2N3507 2N3506 2N3507 hFE hFE hFE 50 35 40 30 30 25 Page 1 of 2 250 175 200 150 2N3506 2N3507 2N3506 2N3507 V(BR)CEO 40 50 1.0 1.0 60 80 5 Vdc Symbol Min. Max. Unit

ICEX V(BR)CBO V(BR)EBO

uAdc Vdc Vdc TO-39 (TO-205-AD)