LDS-0039| Datasheet

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544

DEVICES

LEVELS

2N5152 2N5152L 2N5152U3

2N5154 2N5154L 2N5154U3

JAN JANTX JANTXV JANS

ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
(1)

Symbol
VCEO VCBO VEBO IC

Value
80 100 5.5 2.0 1.0 10 -65 to +200 10 1.7 (U3)

Unit
Vdc Vdc Vdc Adc W C C/W TO-5 2N5152L, 2N5154L

@ TA = +25 C @ TC = +25 C

PT TJ , Tstg RJC

Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Case (1) Note: 1) 2) See 19500/544 for thermal derating curves. This value applies for PW 8.3ms, duty cycle 1%.

ELECTRICAL CHARACTERISTICS (TA = +25 C, unless otherwise noted) Parameters / Test Conditions
OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 100mAdc, IB = 0 Emitter-Base Cutoff Current VEB = 4.0Vdc, IC = 0 VEB = 5.5Vdc, IC = 0 Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = 0 VCE = 100Vdc, VBE = 0 Collector-Emitter Cutoff Current VCE = 40Vdc, IB = 0 ON CHARACTERTICS Forward-Current Transfer Ratio IC = 50mAdc, VCE = 5Vdc IC = 2.5Adc, VCE = 5Vdc V(BR)CEO 80 Vdc TO-39 (TO-205AD) 2N5152, 2N5154

Symbol

Min.

Max.

Unit

IEBO

1.0 1.0 1.0 1.0 50

uAdc mAdc uAdc mAdc uAdc

ICES

ICEO

2N5152 2N5154 2N5152 2N5154

hFE

20 50 30 70

----90 200

U-3 2N5152U3, 2N5154U3

T4-LDS-0039 Rev. 1 (080797)

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LDS-0039 DATASHEET