LDS-0051| Datasheet

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com

N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/592 DEVICES LEVELS

2N7228

2N7228U

JAN JANTX JANTXV

ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Drain Source Voltage Gate Source Voltage Continuous Drain Current TC = +25 C Continuous Drain Current TC = +100 C Max. Power Dissipation TC = +25 C Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 1.2 W/ C for TC > +25 C (2) VGS = 10Vdc, ID = 8A ELECTRICAL CHARACTERISTICS (TA = +25 C, unless otherwise noted) Parameters / Test Conditions Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS VGS, ID = 0.25mA VDS VGS, ID = 0.25mA, Tj = +125 C VDS VGS, ID = 0.25mA, Tj = -55 C Gate Current VGS = 20V, VDS = 0V VGS = 20V, VDS = 0V, Tj = +125 C Drain Current VGS = 0V, VDS = 400V VGS = 0V, VDS = 400V, Tj = +125 C Static Drain-Source On-State Resistance VGS = 10V, ID = 8.0A pulsed VGS = 10V, ID = 12.0A pulsed Tj = +125 C VGS = 10V, ID = 8.0A pulsed Diode Forward Voltage VGS = 0V, ID = 12A pulsed Symbol V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 I
GSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD Min. 500 Max. Unit Vdc Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value 500 20 12.0 8.0 150 (1) 0.415 (2) -55 to +150 Unit Vdc Vdc Adc Adc W C

TO-254AA

2.0 1.0

4.0 5.0 100 200 25 0.25 0.415 0.515 0.90 1.7

Vdc

nAdc

U-PKG (U3) TO-276AB

uAdc mAdc Vdc

T4-LDS-0051 Rev. 1 (072808)

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LDS-0051 DATASHEET