MRF559REVA| Datasheet

By datasheet - February 15th, 2009

MRF559REVA| Datasheet

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MRF559
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF559G
* G Denotes RoHS Complaint, Pb Free Terminal Finish

Features
Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability

Macro X

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 16 30 3.0 150 Unit Vdc Vdc Vdc mA

Thermal Data
P
D Total Device Dissipation @ TC = 75 C Derate above 75 C Storage Temperature Range -65 to +150 C 2.0 20 Watts mW/ C

Tstg

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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Rev A 9/2005