TPR175| Datasheet

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TPR 175
175 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz

GENERAL DESCRIPTION
The TPR 175 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.

CASE OUTLINE 55CX, STYLE 1

ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 388 Watts 55 Volts 3.5 Volts 12.5 Amps - 65 to + 150oC + 200oC

ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg c VSWR BVebo BVces hFE CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance TEST CONDITIONS F = 1090 MHz Vcc = 50 Volts PW = 10 usec DF = 1% F = 1090 MHz Ie = 5 mA Ic = 20 mA Ic = 20 mA, Vce = 5V MIN 175 25 8.0 9.0 40 00:1 3.5 55 10 0.45 Volts Volts
o

TYP

MAX

UNITS Watts Watts dB %

jc2

C/W

Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Issue A February 1998

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

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