UTV200| Datasheet

UTV200| Datasheet

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UTV200
20 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV 200 is a COMMON EMITTER transistor capable of providing 20 Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. The transistor includes double input prematching for full broadband capability. Gold Metalization and Diffused Ballasting are used to provide high reliability and supreme ruggedness.

CASE OUTLINE

55JV, STYLE 2

ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVceo Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 80 Watts

50 Volts 28 Volts 4.0 Volts 4.5 Amps - 65 to + 200 oC + 200 oC

ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg IMD1 VSWR1 CHARACTERISTICS Power Out - Pk Sync Power Input Power Gain Intermodulation Distortion Load Mismatch Tolerance TEST CONDITIONS F = 470 - 860 MHz Vcc = 26.5 Volts Ic = 2.7 Amps Pref = 20Watts F = 860 MHz MIN 20 2.8 8.5 9.5 -48 -46 3:1 TYP MAX UNITS Watts Watts dB dB

LVceo2 BVces2 BVebo2 hFE2 Cob2 jc

Collector to Emitter Breakdown Collector to Base Breakdown Emitter to Base Breakdown Current Gain Output Capacitance Thermal Resistance

Ic = 40 mA Ic = 20mA Ie = 10 mA Vce = 5 V, 1 A Vcb = 26 V, F = 1 MHz Tc = 25oC

28 50 4 10

Volts Volts Volts 150 36 1.2 pF C/W

o

Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB Note 2: Per side Initial Issue June, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120


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