apt34m120j_a| Datasheet

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APT34M120J
1200V, 34A, 0.30 Max

N-Channel MOSFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

S G D

2 T-

ISOTOP

"UL Recognized"

file # E145592

APT34M120J
G

Single die MOSFET

FEATURES
Fast switching with low EMI/RFI Low RDS(on) Ultra low Crss for improved noise immunity Low gate charge Avalanche energy rated RoHS compliant

TYPICAL APPLICATIONS
PFC and other boost converter Buck converter Two switch forward (asymmetrical bridge) Single switch forward Flyback Inverters

Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25 C Continuous Drain Current @ TC = 100 C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1

Ratings 34 22 195 30 2700 25

Unit

V mJ A

Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25 C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight -55 2500 1.03 29.2 10 1.1 0.11 150 Min Typ Max 960 0.13 Unit W C/W C V
2-2007 050-8088 Rev A

oz g in lbf N m

Torque

Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com