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mesa_beamlead_pins_a| Datasheet

By datasheet - February 15th, 2009

mesa_beamlead_pins_a| Datasheet

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Semiconductor Control Devices
HIGH SPEED MESA BEAM LEAD PIN DIODES
Wide Bandwidth / High Switching Speed 5 Gram Typical Pull Strength Very Low R/C (Insertion/Isolation) Products with Low Inductance High Quality, High Resistivity Epitaxy Stable Low Leakage Passivation with Hard Glass Coating

DESCRIPTION
Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junction parameters along with ceramic glass, which provides mechanical strength to the diode. These devices are designed with a narrow base width, a high quality intrinsic `I' layer that provides low loss, high isolation and ultra high speed switching characteristics.

APPLICATIONS
These high speed beam lead PIN diodes are designed for stripline and microstrip circuits and are primarily used in shunt/series and conventional series multithrow configurations as switching, attenuating and phase shifting elements with frequencies extending up to Ku band.

ELECTRICAL SPECIFICATIONS at: TA=25 C
RF PERFORMANCE TYP MODEL NUMBER VB (V) (MIN) Isol (dB) VR =10V F=2.2 GHz IL (dB) IF=10mA F=2.2 GHz If=10uA DC PERFORMANCE CT (pF) (MAX) VR=10V RS (Ohms) (MAX) IF=10mA F=2.2GHz TL (nS) (Typical) IF=10mA, IR=6mA

GC4941 GC4942 GC4943 GC4944 GC4945 GC4946

22.0 26.0 27.5 29.0 30.5 32.0

0.14 0.17 0.27 0.30 0.45 0.51

50 50 50 50 50 50

.06 .04 .030 .025 .022 0.20

1.5 2.0 3.0 3.5 5.5 6.5

50 45 40 35 40 40

Microsemi Lowell 75 Technology Drive, Lowell, MA 01851 Tel. (978) 442-5600


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