ms2473| Datasheet

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MS2473
600 Watts, 50 Volts, Pulsed Avionics 1090 MHz

GENERAL DESCRIPTION
The MS2473 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the 1090MHz frequency band. The device has gold thin-film metallization for proven highest MTTF. Low thermal resistance packaging reduces the junction temperature and extends device lifetime.

CASE OUTLINE M112

ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVcbo Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 2300 Watts 65 Volts 3.5 Volts 46 Amps - 65 to + 150oC + 200oC

ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg c RLIN BVebo BVcbo Ices hFE CHARACTERISTICS Power Out Power Input = 150W Power Gain Collector Efficiency Input Return Loss TEST CONDITIONS F = 1090 MHz Vcc = 50 Volts PW = 10 usec DF = 1% F = 1090 MHz MIN 600 150 6.0 35 10 TYP MAX UNITS Watts Watts dB % dB

jc2

Emitter to Base Breakdown Collector to Base Breakdown Collector to Emitter Leakage DC - Current Gain Thermal Resistance

Ie = 10 mA Ic = 25 mA Vce = 50V Vce = 5V, Ic = 1A

3.5 65 5 0.06 35 200

Volts Volts mA C/W

Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Initial , January 2007

Microsemi PPG reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.