msc0962| Datasheet

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Silicon Switching Diode

Applications

1N4454, 1N4454-1

DO-35 Glass Package

Used in general purpose applications, where performance and switching speed are important.

DO-35 Glass Package L a dDa . e i 0. 1 - . 2 " 0 80 0 2 0. 5 - . 5 m m 4 80 5 8

Features
Six sigma quality Metallurgically bonded 1.0" Length BKC's Sigma BondTM plating 25.4 mm m m (Min.) for problem free solderability LL-34/35 MELF SMD available Full approval to Mil-S-19500 /144 Available up to JANTXV-1 levels "S" level screening available to Source Control Drawings
0.120-.200" 3.05-5.08-

Dia.
0.06-0.09"

15 - . 8m m . 322

Maximum Ratings Peak Inverse Voltage @ 5uA & 0.1uA @ -55 C Average Rectified Current Continuous Forward Current Peak Surge Current (tpeak = 1 sec.) Power Dissipation TL= 50 C, L = 3/8" from body Operating Temperature Range Storage Temperature Range Electrical Characteristics @ 25 oC* Forward Voltage @ IF= 10 mA Breakdown Voltage @ IR = 5 uA Reverse Leakage Current @ VR = 50 V Reverse Leakage Current @ VR = 50 V, T=150 o C Capacitance @ VR = 0 V, f = 1mHz Reverse Recovery Time (note 1)/(note 2) Forward Recovery Voltage (note 3)
o o

Symbol PIV IAvg IFdc Ipeak Ptot TOp TSt Symbol VF PIV IR IR CT trr Vfr

Value 75 (Min.) 200 300 1.0 500 200 -65 to +200 Limits 1.0(max) 75 (min) 0.1 (max) 100 (max) 2.0 (max) 2.0/4.0 (max) 3.0 (max)

Unit Volts mAmps mAmps Amp mWatts
o o

C C

Unit Volts Volts uA uA pF nSecs Volts

Note 1: Per Method 4031-A with IF = IR = 10 mA, RL = 100 Ohms, C = 3 Pf. Note 2: Per Method 4031-A with IF = 10 mA, RL = 100 Ohms, Vr = 6 V, Recover to 1.0 mA. Note 3: Per Method 4026 with IF = 100 mA, RL = 50 Ohms,Peak Square wave ,100 nSec Pulse Width, tr<30 nSec,repetition Rate = 5 - 100 KHz. * Unless Otherwise Specified

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