74AUP1G132_1| Datasheet

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74AUP1G132
Low-power 2-input NAND Schmitt trigger
Rev. 01 -- 20 October 2006 Product data sheet

1. General description
The 74AUP1G132 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74AUP1G132 provides the single 2-input NAND Schmitt trigger function which accept standard input signals. They are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. The inputs switch at different points for positive and negative-going signals. The difference between the positive voltage VT+ and the negative voltage VT- is defined as the input hysteresis voltage VH.

2. Features
I Wide supply voltage range from 0.8 V to 3.6 V I High noise immunity I ESD protection: N HBM JESD22-A114-D Class 3A. Exceeds 5000 V N MM JESD22-A115-A exceeds 200 V N CDM JESD22-C101-C exceeds 1000 V I Low static power consumption; ICC = 0.9 uA (maximum) I Latch-up performance exceeds 100 mA per JESD 78 Class II I Inputs accept voltages up to 3.6 V I Low noise overshoot and undershoot < 10 % of VCC I IOFF circuitry provides partial Power-down mode operation I Multiple package options I Specified from -40 C to +85 C and -40 C to +125 C

3. Applications
I Wave and pulse shaper I Astable multivibrator I Monostable multivibrator.