74AUP1G86_2| Datasheet

74AUP1G86_2| Datasheet

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74AUP1G86
Low-power 2-input EXCLUSIVE-OR gate
Rev. 02 -- 28 June 2006 Product data sheet

1. General description
The 74AUP1G86 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74AUP1G86 provides the single 2-input EXCLUSIVE-OR function.

2. Features
s Wide supply voltage range from 0.8 V to 3.6 V s High noise immunity s Complies with JEDEC standards: x JESD8-12 (0.8 V to 1.3 V) x JESD8-11 (0.9 V to 1.65 V) x JESD8-7 (1.2 V to 1.95 V) x JESD8-5 (1.8 V to 2.7 V) x JESD8-B (2.7 V to 3.6 V) s ESD protection: x HBM JESD22-A114-C Class 3A. Exceeds 5000 V x MM JESD22-A115-A exceeds 200 V x CDM JESD22-C101-C exceeds 1000 V s Low static power consumption; ICC = 0.9 uA (maximum) s Latch-up performance exceeds 100 mA per JESD 78 Class II s Inputs accept voltages up to 3.6 V s Low noise overshoot and undershoot < 10 % of VCC s IOFF circuitry provides partial Power-down mode operation s Multiple package options s Specified from -40 C to +85 C and -40 C to +125 C


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